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Part #: FQA28N50
ObsoletePart Category:Power Field-Effect Transistors
Manufacturer:ONSEMI
Description:Power Field-Effect Transistor, 28.4A I(D), 500V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
FQA28N50 SPECIFICATIONS
| Status | Discontinued |
| Avalanche Energy Rating (Eas) (mJ) | 1300.0000000000000000 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 500.0000000000000000 |
| Drain Current-Max (ID) (A) | 28.4000000000000000 |
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FQA28N50 Datasheet & Equivalents - ONSEMI - Datasheets360.com - Electronic Component Search | Datasheet and Supplier InformationEquivalent Parts: Part #FQA28N50
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