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Part #: FPD750-003
OtherPart Category:RF Power Field-Effect Transistors
Manufacturer:COMPOUND PHOTONICS
Description:RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, High Electron Mobility FET
FPD750-003 SPECIFICATIONS
| Status | Contact Mfr |
| Configuration | SINGLE |
| DS Breakdown Voltage-Min (V) | 10.0000000000000000 |
| FET Technology | HIGH ELECTRON MOBILITY |
| Highest Frequency Band | X BAND |
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