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Part #: FPD6836
ActivePart Category:RF Power Field-Effect Transistors
Manufacturer:QORVO INC
Description:RF Power Field-Effect Transistor, 1-Element, X Band, Silicon, N-Channel, High Electron Mobility FET
FPD6836 SPECIFICATIONS
| Status | Active |
| Case Connection | SOURCE |
| Configuration | SINGLE |
| DS Breakdown Voltage-Min (V) | 10.0000000000000000 |
| FET Technology | HIGH ELECTRON MOBILITY |
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FPD6836 Datasheet - QORVO INC - Datasheets360.com