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Part #: FPD200
OtherPart Category:RF Small Signal Field-Effect Transistors
Manufacturer:RF MICRO DEVICES INC
Description:RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, High Electron Mobility FET
FPD200 SPECIFICATIONS
| Status | Transferred |
| Configuration | SINGLE |
| DS Breakdown Voltage-Min (V) | 8.0000000000000000 |
| FET Technology | HIGH ELECTRON MOBILITY |
| Highest Frequency Band | KU BAND |
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