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Part #: FPD1500DFN
ObsoletePart Category:RF Power Field-Effect Transistors
Manufacturer:RF MICRO DEVICES INC
Description:RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, High Electron Mobility FET
FPD1500DFN SPECIFICATIONS
| Status | Discontinued |
| Configuration | SINGLE |
| DS Breakdown Voltage-Min (V) | 8.0000000000000000 |
| FET Technology | HIGH ELECTRON MOBILITY |
| Highest Frequency Band | L BAND |
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Equivalent Parts: Part #FPD1500DFN
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