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FP35R12N2T7 Datasheet - INFINEON TECHNOLOGIES AG - Datasheets360.comPart #: FP35R12N2T7
ActivePart Category:Insulated Gate Bipolar Transistors
Manufacturer:INFINEON TECHNOLOGIES AG
Description:Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel
FP35R12N2T7 SPECIFICATIONS
| Status | Active |
| Additional Feature | UL RECOGNIZED |
| Case Connection | ISOLATED |
| Collector Current-Max (IC) (A) | 35.0000000000000000 |
| Collector-emitter Voltage-Max (V) | 1200.0000000000000000 |
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