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Part #: FMP10N60E
OtherPart Category:Power Field-Effect Transistors
Manufacturer:FUJI ELECTRIC CO LTD
Description:Power Field-Effect Transistor, 10A I(D), 600V, 0.79ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
FMP10N60E SPECIFICATIONS
| Status | Unknown |
| Avalanche Energy Rating (Eas) (mJ) | 416.0000000000000000 |
| Case Connection | ISOLATED |
| Configuration | SINGLE |
| DS Breakdown Voltage-Min (V) | 600.0000000000000000 |
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Equivalent Parts: Part #FMP10N60E
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