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Part #: FMOSQ08DN03
ActivePart Category:Power Field-Effect Transistors
Manufacturer:FORMOSA MICROSEMI CO LTD
Description:Power Field-Effect Transistor, 8A I(D), 30V, 0.012ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
FMOSQ08DN03 SPECIFICATIONS
| Status | Active |
| Avalanche Energy Rating (Eas) (mJ) | 16.0000000000000000 |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 30.0000000000000000 |
| Drain Current-Max (ID) (A) | 8.0000000000000000 |
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