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Part #: FMOSP129N20
ActivePart Category:Power Field-Effect Transistors
Manufacturer:FORMOSA MICROSEMI CO LTD
Description:Power Field-Effect Transistor, 129A I(D), 200V, 0.0109ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
FMOSP129N20 SPECIFICATIONS
| Status | Active |
| Avalanche Energy Rating (Eas) (mJ) | 841.0000000000000000 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 200.0000000000000000 |
| Drain Current-Max (ID) (A) | 129.0000000000000000 |
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