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Part #: FMOSAV24DN06
ActivePart Category:Power Field-Effect Transistors
Manufacturer:FORMOSA MICROSEMI CO LTD
Description:Power Field-Effect Transistor, 24A I(D), 60V, 0.0138ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
FMOSAV24DN06 SPECIFICATIONS
| Status | Active |
| Avalanche Energy Rating (Eas) (mJ) | 26.0000000000000000 |
| Case Connection | GATE SOURCE |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 60.0000000000000000 |
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