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Part #: FMOS2319
ActivePart Category:Power Field-Effect Transistors
Manufacturer:FORMOSA MICROSEMI CO LTD
Description:Power Field-Effect Transistor, 3.1A I(D), 40V, 0.08ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
FMOS2319 SPECIFICATIONS
| Status | Active |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 40.0000000000000000 |
| Drain Current-Max (ID) (A) | 3.1000000000000000 |
| Drain-source On Resistance-Max (ohm) | 0.0800000000000000 |
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