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FML60N115S2HF Datasheet - FUJI ELECTRIC CO LTD - Datasheets360.comPart #: FML60N115S2HF
ObsoletePart Category:Power Field-Effect Transistors
Manufacturer:FUJI ELECTRIC CO LTD
Description:Power Field-Effect Transistor, 37.1A I(D), 600V, 0.115ohm, 1-Element, N-Channel, Silicon, Superjunction Mosfet FET
FML60N115S2HF SPECIFICATIONS
| Status | Discontinued |
| Avalanche Energy Rating (Eas) (mJ) | 708.1000000000000000 |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 600.0000000000000000 |
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