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Part #: FMI13N60E
ActivePart Category:Power Field-Effect Transistors
Manufacturer:FUJI ELECTRIC CO LTD
Description:Power Field-Effect Transistor, 13A I(D), 600V, 0.58ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
FMI13N60E SPECIFICATIONS
| Status | Active |
| Additional Feature | LOW NOISE |
| Avalanche Energy Rating (Eas) (mJ) | 471.5000000000000000 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 600.0000000000000000 |
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Equivalent Parts: Part #FMI13N60E
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