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Part #: FMB80N10T2
ActivePart Category:Power Field-Effect Transistors
Manufacturer:FUJI ELECTRIC CO LTD
Description:Power Field-Effect Transistor, 80A I(D), 100V, 0.0128ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
FMB80N10T2 SPECIFICATIONS
| Status | Active |
| Avalanche Energy Rating (Eas) (mJ) | 728.0000000000000000 |
| Configuration | SINGLE |
| DS Breakdown Voltage-Min (V) | 100.0000000000000000 |
| Drain Current-Max (ID) (A) | 80.0000000000000000 |
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