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Part #: FLL400IP-2
ObsoletePart Category:RF Power Field-Effect Transistors
Manufacturer:FUJITSU SEMICONDUCTOR AMERICA INC
Description:RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Junction FET
FLL400IP-2 SPECIFICATIONS
| Status | Discontinued |
| Case Connection | SOURCE |
| Configuration | SINGLE |
| DS Breakdown Voltage-Min (V) | 15.0000000000000000 |
| Drain Current-Max (ID) (A) | 8.0000000000000000 |
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FLL400IP-2 Datasheet & Equivalents - FUJITSU SEMICONDUCTOR AMERICA INC - Datasheets360.com - Electronic Component Search | Datasheet and Supplier InformationEquivalent Parts: Part #FLL400IP-2
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