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FLK017WF Datasheet - FUJITSU SEMICONDUCTOR AMERICA INC - Datasheets360.comPart #: FLK017WF
OtherPart Category:RF Power Field-Effect Transistors
Manufacturer:FUJITSU SEMICONDUCTOR AMERICA INC
Description:RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Metal-oxide Semiconductor FET
FLK017WF SPECIFICATIONS
| Status | Transferred |
| Additional Feature | HIGH RELIABILITY |
| Case Connection | SOURCE |
| Configuration | SINGLE |
| DS Breakdown Voltage-Min (V) | 15.0000000000000000 |
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