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FHX13LG Datasheet - FUJITSU SEMICONDUCTOR AMERICA INC - Datasheets360.comPart #: FHX13LG
OtherPart Category:RF Small Signal Field-Effect Transistors
Manufacturer:FUJITSU SEMICONDUCTOR AMERICA INC
Description:RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, High Electron Mobility FET
FHX13LG SPECIFICATIONS
| Status | Transferred |
| Additional Feature | HIGH RELIABILITY |
| Configuration | SINGLE |
| DS Breakdown Voltage-Min (V) | 3.5000000000000000 |
| Drain Current-Max (ID) (A) | 0.0600000000000000 |
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