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Part #: FGA50N100BNTD2
ObsoletePart Category:Insulated Gate Bipolar Transistors
Manufacturer:ONSEMI
Description:Insulated Gate Bipolar Transistor, 50A I(C), 1000V V(BR)CES, N-Channel
FGA50N100BNTD2 SPECIFICATIONS
| Status | Discontinued |
| Collector Current-Max (IC) (A) | 50.0000000000000000 |
| Collector-emitter Voltage-Max (V) | 1000.0000000000000000 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Fall Time-Max (ns) | 100.0000000000000000 |
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FGA50N100BNTD2 Datasheet - ONSEMI - Datasheets360.com