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Part #: FGA50N100BNTD
ObsoletePart Category:Insulated Gate Bipolar Transistors
Manufacturer:ONSEMI
Description:Insulated Gate Bipolar Transistor, 50A I(C), 1000V V(BR)CES, N-Channel
FGA50N100BNTD SPECIFICATIONS
| Status | Discontinued |
| Collector Current-Max (IC) (A) | 50.0000000000000000 |
| Collector-emitter Voltage-Max (V) | 1000.0000000000000000 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| JESD-30 Code | R-PSFM-T3 |
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FGA50N100BNTD Datasheet - ONSEMI - Datasheets360.com