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Part #: FF2MR12KM1
ObsoletePart Category:Power Field-Effect Transistors
Manufacturer:INFINEON TECHNOLOGIES AG
Description:Power Field-Effect Transistor, 1200V, 2-Element, N-Channel, Silicon Carbide, Trench Mosfet FET
FF2MR12KM1 SPECIFICATIONS
| Status | Discontinued |
| Configuration | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 1200.0000000000000000 |
| FET Technology | TRENCH MOSFET |
| Feedback Cap-Max (Crss) (pF) | 302.0000 |
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FF2MR12KM1 Datasheet & Equivalents - INFINEON TECHNOLOGIES AG - Datasheets360.com - Electronic Component Search | Datasheet and Supplier InformationEquivalent Parts: Part #FF2MR12KM1
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