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FF1MR12MM1HB11BPSA1 Datasheet - INFINEON TECHNOLOGIES AG - Datasheets360.comPart #: FF1MR12MM1HB11BPSA1
ActivePart Category:Power Field-Effect Transistors
Manufacturer:INFINEON TECHNOLOGIES AG
Description:Power Field-Effect Transistor, 420A I(D), 1200V, 0.00191ohm, 2-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET
FF1MR12MM1HB11BPSA1 SPECIFICATIONS
| Status | Active |
| Additional Feature | IEC-60664-1 |
| Case Connection | ISOLATED |
| Configuration | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
| DS Breakdown Voltage-Min (V) | 1200.0000000000000000 |
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