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Part #: FDS8949
ActivePart Category:Power Field-Effect Transistors
Manufacturer:ONSEMI
Description:Power Field-Effect Transistor, 6A I(D), 40V, 0.043ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
FDS8949 SPECIFICATIONS
| Status | Active |
| Avalanche Energy Rating (Eas) (mJ) | 26.0000000000000000 |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 40.0000000000000000 |
| Drain Current-Max (ID) (A) | 6.0000000000000000 |
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FDS8949 Datasheet & Equivalents - ONSEMI - Datasheets360.com - Electronic Component Search | Datasheet and Supplier InformationEquivalent Parts: Part #FDS8949
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