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Part #: FDS86267P
ActivePart Category:Small Signal Field-Effect Transistors
Manufacturer:ONSEMI
Description:Small Signal Field-Effect Transistor, 2.2A I(D), 150V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
FDS86267P SPECIFICATIONS
| Status | Active |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 150.0000000000000000 |
| Drain Current-Max (ID) (A) | 2.2000000000000000 |
| Drain-source On Resistance-Max (ohm) | 0.2550000000000000 |
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FDS86267P Datasheet - ONSEMI - Datasheets360.com