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Part #: FDS6900AS
OtherPart Category:Power Field-Effect Transistors
Manufacturer:FAIRCHILD SEMICONDUCTOR CORP
Description:Power Field-Effect Transistor, 8.2A I(D), 30V, 0.022ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
FDS6900AS SPECIFICATIONS
| Status | Transferred |
| Configuration | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 30.0000000000000000 |
| Drain Current-Max (ID) (A) | 8.2000000000000000 |
| Drain-source On Resistance-Max (ohm) | 0.0220000000000000 |
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