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Part #: FDS6680S
ObsoletePart Category:Power Field-Effect Transistors
Manufacturer:ONSEMI
Description:Power Field-Effect Transistor, 11.5A I(D), 30V, 0.011ohm, 1-Element, N-Channel, Silicon, Trench Mosfet FET
FDS6680S SPECIFICATIONS
| Status | Discontinued |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 30.0000000000000000 |
| Drain Current-Max (ID) (A) | 11.5000000000000000 |
| Drain-source On Resistance-Max (ohm) | 0.0110000000000000 |
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