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Part #: FDS6675BZ
ActivePart Category:Power Field-Effect Transistors
Manufacturer:ONSEMI
Description:Power Field-Effect Transistor, 11A I(D), 30V, 0.013ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
FDS6675BZ SPECIFICATIONS
| Status | Active |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 30.0000000000000000 |
| Drain Current-Max (ID) (A) | 11.0000000000000000 |
| Drain-source On Resistance-Max (ohm) | 0.0130000000000000 |
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Equivalent Parts: Part #FDS6675BZ
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