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FDS4559 Datasheet - FAIRCHILD SEMICONDUCTOR CORP - Datasheets360.comPart #: FDS4559
OtherPart Category:Power Field-Effect Transistors
Manufacturer:FAIRCHILD SEMICONDUCTOR CORP
Description:Power Field-Effect Transistor, 4.5A I(D), 60V, 0.055ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
FDS4559 SPECIFICATIONS
| Status | Transferred |
| Avalanche Energy Rating (Eas) (mJ) | 90.0000000000000000 |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 60.0000000000000000 |
| Drain Current-Max (ID) (A) | 4.5000000000000000 |
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