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Part #: FDP2D3N10C
ActivePart Category:Power Field-Effect Transistors
Manufacturer:ONSEMI
Description:Power Field-Effect Transistor, 120A I(D), 100V, 0.0023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
FDP2D3N10C SPECIFICATIONS
| Status | Active |
| Avalanche Energy Rating (Eas) (mJ) | 1176.0000000000000000 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 100.0000000000000000 |
| Drain Current-Max (ID) (A) | 120.0000000000000000 |
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