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Part #: FDMQ8203
ActivePart Category:Power Field-Effect Transistors
Manufacturer:ONSEMI
Description:Power Field-Effect Transistor, 3.4A I(D), 100V, 0.11ohm, 4-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
FDMQ8203 SPECIFICATIONS
| Status | Active |
| Case Connection | DRAIN |
| Configuration | 2 BANKS, COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 100.0000000000000000 |
| Drain Current-Max (ID) (A) | 3.4000000000000000 |
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