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Part #: FDMC2610
ActivePart Category:Power Field-Effect Transistors
Manufacturer:ONSEMI
Description:Power Field-Effect Transistor, 2.2A I(D), 200V, 0.397ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
FDMC2610 SPECIFICATIONS
| Status | Active |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 200.0000000000000000 |
| Drain Current-Max (ID) (A) | 2.2000000000000000 |
| Drain-source On Resistance-Max (ohm) | 0.3970000000000000 |
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