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Part #: FDD6N25TM
OtherPart Category:Power Field-Effect Transistors
Manufacturer:FAIRCHILD SEMICONDUCTOR CORP
Description:Power Field-Effect Transistor, 4.4A I(D), 250V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
FDD6N25TM SPECIFICATIONS
| Status | Transferred |
| Additional Feature | FAST SWITCHING |
| Avalanche Energy Rating (Eas) (mJ) | 45.0000000000000000 |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
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