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Part #: FDD5N53TM
ActivePart Category:Power Field-Effect Transistors
Manufacturer:ONSEMI
Description:Power Field-Effect Transistor, 4A I(D), 530V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
FDD5N53TM SPECIFICATIONS
| Status | Active |
| Avalanche Energy Rating (Eas) (mJ) | 256.0000000000000000 |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 530.0000000000000000 |
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