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Part #: FDD5N50FTM-WS
ActivePart Category:Power Field-Effect Transistors
Manufacturer:ONSEMI
Description:Power Field-Effect Transistor, 3.5A I(D), 500V, 1.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
FDD5N50FTM-WS SPECIFICATIONS
| Status | Active |
| Avalanche Energy Rating (Eas) (mJ) | 257.0000000000000000 |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 500.0000000000000000 |
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FDD5N50FTM-WS Datasheet - ONSEMI - Datasheets360.com