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Part #: FDB5645
ObsoletePart Category:Power Field-Effect Transistors
Manufacturer:FAIRCHILD SEMICONDUCTOR CORP
Description:Power Field-Effect Transistor, 83A I(D), 60V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
FDB5645 SPECIFICATIONS
| Status | Discontinued |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 60.0000000000000000 |
| Drain Current-Max (ID) (A) | 83.0000000000000000 |
| Drain-source On Resistance-Max (ohm) | 0.0095000000000000 |
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FDB5645 Datasheet & Equivalents - FAIRCHILD SEMICONDUCTOR CORP - Datasheets360.com - Electronic Component Search | Datasheet and Supplier InformationEquivalent Parts: Part #FDB5645
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