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Part #: FDB3632
OtherPart Category:Power Field-Effect Transistors
Manufacturer:FAIRCHILD SEMICONDUCTOR CORP
Description:Power Field-Effect Transistor, 12A I(D), 100V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
FDB3632 SPECIFICATIONS
| Status | Transferred |
| Avalanche Energy Rating (Eas) (mJ) | 337.0000000000000000 |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 100.0000000000000000 |
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