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Part #: FDB20N50F
OtherPart Category:Power Field-Effect Transistors
Manufacturer:FAIRCHILD SEMICONDUCTOR CORP
Description:Power Field-Effect Transistor, 20A I(D), 500V, 0.26ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
FDB20N50F SPECIFICATIONS
| Status | Transferred |
| Avalanche Energy Rating (Eas) (mJ) | 1110.0000000000000000 |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 500.0000000000000000 |
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