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Part #: FDB13AN06A0
ActivePart Category:Power Field-Effect Transistors
Manufacturer:ONSEMI
Description:Power Field-Effect Transistor, 62A I(D), 60V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
FDB13AN06A0 SPECIFICATIONS
| Status | Active |
| Avalanche Energy Rating (Eas) (mJ) | 56.0000000000000000 |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 60.0000000000000000 |
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FDB13AN06A0 Datasheet & Equivalents - ONSEMI - Datasheets360.com - Electronic Component Search | Datasheet and Supplier InformationEquivalent Parts: Part #FDB13AN06A0
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