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Part #: FCB36N60NTM
ObsoletePart Category:Power Field-Effect Transistors
Manufacturer:ONSEMI
Description:Power Field-Effect Transistor, 36A I(D), 600V, 0.09ohm, 1-Element, N-Channel, Metal-oxide Semiconductor FET
FCB36N60NTM SPECIFICATIONS
| Status | Discontinued |
| Configuration | SINGLE |
| DS Breakdown Voltage-Min (V) | 600.0000000000000000 |
| Drain Current-Max (ID) (A) | 36.0000000000000000 |
| Drain-source On Resistance-Max (ohm) | 0.0900000000000000 |
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