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Part #: FBG10N30BCH
ActivePart Category:Power Field-Effect Transistors
Manufacturer:MICROSS COMPONENTS
Description:Power Field-Effect Transistor, 30A I(D), 100V, 0.012ohm, 1-Element, N-Channel, Gallium Nitride, High Electron Mobility FET
FBG10N30BCH SPECIFICATIONS
| Status | Active |
| Additional Feature | HIGH RELIABILITY |
| Case Connection | DRAIN SOURCE |
| Configuration | SINGLE |
| DS Breakdown Voltage-Min (V) | 100.0000000000000000 |
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