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Part #: FBG04N08ASH
ActivePart Category:Power Field-Effect Transistors
Manufacturer:MICROSS COMPONENTS
Description:Power Field-Effect Transistor, 8A I(D), 40V, 0.028ohm, 1-Element, N-Channel, Gallium Nitride, High Electron Mobility FET
FBG04N08ASH SPECIFICATIONS
| Status | Active |
| Additional Feature | HIGH RELIABILITY |
| Configuration | SINGLE |
| DS Breakdown Voltage-Min (V) | 40.0000000000000000 |
| Drain Current-Max (ID) (A) | 8.0000000000000000 |
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