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Part #: F7H2N
ObsoletePart Category:Power Field-Effect Transistors
Manufacturer:SHINDENGEN ELECTRIC MANUFACTURING CO LTD
Description:Power Field-Effect Transistor, 7A I(D), 20V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
F7H2N SPECIFICATIONS
| Status | Discontinued |
| Configuration | SINGLE |
| DS Breakdown Voltage-Min (V) | 20.0000000000000000 |
| Drain Current-Max (ID) (A) | 7.0000000000000000 |
| Drain-source On Resistance-Max (ohm) | 0.0300000000000000 |
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