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Part #: F5H2ND
ObsoletePart Category:Power Field-Effect Transistors
Manufacturer:SHINDENGEN ELECTRIC MANUFACTURING CO LTD
Description:Power Field-Effect Transistor, 5A I(D), 20V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
F5H2ND SPECIFICATIONS
| Status | Discontinued |
| DS Breakdown Voltage-Min (V) | 20.0000000000000000 |
| Drain Current-Max (ID) (A) | 5.0000000000000000 |
| Drain-source On Resistance-Max (ohm) | 0.0500000000000000 |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
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Equivalent Parts: Part #F5H2ND
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