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Part #: F5029
ActivePart Category:Power Field-Effect Transistors
Manufacturer:FUJI ELECTRIC CO LTD
Description:Power Field-Effect Transistor, 18A I(D), 40V, 0.07ohm, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
F5029 SPECIFICATIONS
| Status | Active |
| DS Breakdown Voltage-Min (V) | 40.0000000000000000 |
| Drain Current-Max (ID) (A) | 18.0000000000000000 |
| Drain-source On Resistance-Max (ohm) | 0.0700000000000000 |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
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