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Part #: F5012H
ObsoletePart Category:Power Field-Effect Transistors
Manufacturer:FUJI ELECTRIC CO LTD
Description:Power Field-Effect Transistor, 3A I(D), 80V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
F5012H SPECIFICATIONS
| Status | Discontinued |
| Case Connection | ISOLATED |
| Configuration | SINGLE |
| DS Breakdown Voltage-Min (V) | 80.0000000000000000 |
| Drain Current-Max (ID) (A) | 3.0000000000000000 |
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