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Part #: F4H3ND
ObsoletePart Category:Power Field-Effect Transistors
Manufacturer:SHINDENGEN ELECTRIC MANUFACTURING CO LTD
Description:Power Field-Effect Transistor, 4A I(D), 30V, 0.1ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
F4H3ND SPECIFICATIONS
| Status | Discontinued |
| DS Breakdown Voltage-Min (V) | 30.0000000000000000 |
| Drain Current-Max (ID) (A) | 4.0000000000000000 |
| Drain-source On Resistance-Max (ohm) | 0.1000000000000000 |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
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Equivalent Parts: Part #F4H3ND
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