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Part #: F4200R17N3E4BPSA1
ActivePart Category:Insulated Gate Bipolar Transistors
Manufacturer:INFINEON TECHNOLOGIES AG
Description:Insulated Gate Bipolar Transistor, 1700V V(BR)CES, N-Channel
F4200R17N3E4BPSA1 SPECIFICATIONS
| Status | Active |
| Case Connection | ISOLATED |
| Collector-emitter Voltage-Max (V) | 1700.0000000000000000 |
| Configuration | BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
| Gate-emitter Thr Voltage-Max (V) | 6.2500000000000000 |
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