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Part #: F411MR12W2M1HPB76BPSA1
ActivePart Category:Power Field-Effect Transistors
Manufacturer:INFINEON TECHNOLOGIES AG
Description:Power Field-Effect Transistor, 60A I(D), 1200V, 4-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET
F411MR12W2M1HPB76BPSA1 SPECIFICATIONS
| Status | Active |
| Additional Feature | UL RECOGNIZED |
| Case Connection | ISOLATED |
| Configuration | COMPLEX |
| DS Breakdown Voltage-Min (V) | 1200.0000000000000000 |
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