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Part #: EPC2105ENGR
OtherPart Category:Power Field-Effect Transistors
Manufacturer:EFFICIENT POWER CONVERSION CORP
Description:Power Field-Effect Transistor, 9.5A I(D), 80V, 0.0145ohm, 2-Element, N-Channel, Gallium Nitride, Metal-oxide Semiconductor FET
EPC2105ENGR SPECIFICATIONS
| Status | Contact Mfr |
| Configuration | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 80.0000000000000000 |
| Drain Current-Max (ID) (A) | 9.5000000000000000 |
| Drain-source On Resistance-Max (ohm) | 0.0145000000000000 |
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