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EMB20N03G Datasheet - EXCELLIANCE MOS CORP - Datasheets360.comPart #: EMB20N03G
OtherPart Category:Power Field-Effect Transistors
Manufacturer:EXCELLIANCE MOS CORP
Description:Power Field-Effect Transistor, 9.5A I(D), 30V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
EMB20N03G SPECIFICATIONS
| Status | Contact Mfr |
| Avalanche Energy Rating (Eas) (mJ) | 3.2000000000000000 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 30.0000000000000000 |
| Drain Current-Max (ID) (A) | 9.5000000000000000 |
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