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Part #: ECH8617
OtherPart Category:Power Field-Effect Transistors
Manufacturer:SANYO ELECTRIC CO LTD
Description:Power Field-Effect Transistor, 1.5A I(D), 100V, 0.52ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
ECH8617 SPECIFICATIONS
| Status | Transferred |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 100.0000000000000000 |
| Drain Current-Max (ID) (A) | 1.5000000000000000 |
| Drain-source On Resistance-Max (ohm) | 0.5200000000000000 |
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